BUZ902P
BUZ902P is N-Channel MOSFET manufactured by Magna Tec.
FEATURES
- HIGH SPEED SWITCHING
- SEMEFAB DESIGNED AND DIFFUSED
- HIGH VOLTAGE (220V & 250V)
- HIGH ENERGY RATING
- ENHANCEMENT MODE
- INTEGRAL PROTECTION DIODES
- PLIMENTARY P- CHANNEL BUZ907P & BUZ908P
0.40 (0.016) 0.79 (0.031)
19.81 (0.780) 20.32 (0.800)
1.01 (0.040) 1.40 (0.055)
2.21 (0.087) 2.59 (0.102)
5.25 ( 0.215) BSC
TO-247
Pin 1
- Gate
..
Pin 2
- Source Case
- Source
Pin 3
- Drain
ABSOLUTE MAXIMUM RATINGS
(Tcase = 25°C unless otherwise stated) VDSX Drain
- Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate
- Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction
- Case @ Tcase = 25°C BUZ902P 220V ±14V 8A 8A 125W
- 55 to 150°C 150°C 1°C/W BUZ903P 250V
Magnatec.
Telephone (01455) 554711. Fax (01455) 558843
Prelim. 01/97
MAGNA
Characteristic
BVDSX BVGSS VGS(OFF) VDS(SAT)- RDS(on)-
BUZ902P BUZ903P
STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated)
Test Conditions
BUZ902P BUZ903P IG = ±100µA ID = 100m A ID = 8A ID = 8A VDS = 220V IDSX Drain
- Source Cut- Off Current VGS = -10V BUZ902P VDS = 250V BUZ903P yfs- Forward Transfer Admittance VDS = 10V ID = 3A 0.7 2 S 10 m A ID = 10m A...