• Part: BUZ902P
  • Description: N-Channel MOSFET
  • Category: MOSFET
  • Manufacturer: Magna Tec
  • Size: 52.06 KB
Download BUZ902P Datasheet PDF
Magna Tec
BUZ902P
BUZ902P is N-Channel MOSFET manufactured by Magna Tec.
FEATURES - HIGH SPEED SWITCHING - SEMEFAB DESIGNED AND DIFFUSED - HIGH VOLTAGE (220V & 250V) - HIGH ENERGY RATING - ENHANCEMENT MODE - INTEGRAL PROTECTION DIODES - PLIMENTARY P- CHANNEL BUZ907P & BUZ908P 0.40 (0.016) 0.79 (0.031) 19.81 (0.780) 20.32 (0.800) 1.01 (0.040) 1.40 (0.055) 2.21 (0.087) 2.59 (0.102) 5.25 ( 0.215) BSC TO-247 Pin 1 - Gate .. Pin 2 - Source Case - Source Pin 3 - Drain ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C unless otherwise stated) VDSX Drain - Source Voltage VGSS ID ID(PK) PD Tstg Tj RθJC Gate - Source Voltage Continuous Drain Current Body Drain Diode Total Power Dissipation Storage Temperature Range Maximum Operating Junction Temperature Thermal Resistance Junction - Case @ Tcase = 25°C BUZ902P 220V ±14V 8A 8A 125W - 55 to 150°C 150°C 1°C/W BUZ903P 250V Magnatec. Telephone (01455) 554711. Fax (01455) 558843 Prelim. 01/97 MAGNA Characteristic BVDSX BVGSS VGS(OFF) VDS(SAT)- RDS(on)- BUZ902P BUZ903P STATIC CHARACTERISTICS (Tcase = 25°C unless otherwise stated) Test Conditions BUZ902P BUZ903P IG = ±100µA ID = 100m A ID = 8A ID = 8A VDS = 220V IDSX Drain - Source Cut- Off Current VGS = -10V BUZ902P VDS = 250V BUZ903P yfs- Forward Transfer Admittance VDS = 10V ID = 3A 0.7 2 S 10 m A ID = 10m A...