MDIS4N65B - N-Channel Trench MOSFET

Description

These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality.

These devices are suitable device for SMPS, high Speed switching and general purpose applications.

Features

 VDS = 650V  ID = 3.65A  RDS(ON) ≤ 2.2Ω @ VGS = 10V @ VGS = 10V.

MagnaChip

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Datasheet Details

Part number	MDIS4N65B
Manufacturer	MagnaChip
File Size	0.98 MB
Description	N-Channel Trench MOSFET
Datasheet	MDIS4N65B Datasheet
Additional preview pages of the MDIS4N65B datasheet.

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Full PDF Text Transcription

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MDIS4N65B N-channel MOSFET 650V (For Lite on Only) MDIS4N65B N-Channel MOSFET 650V, 3.65A, 2.2Ω General Description These N-channel MOSFET are produced using advanced Magnachip’s MOSFET Technology, which provides low onstate resistance, high switching performance and excellent quality. These devices are suitable device for SMPS, high Speed switching and general purpose applications. Features  VDS = 650V  ID = 3.65A  RDS(ON) ≤ 2.

Published: Apr 10, 2017 |