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ME60N04 - N-Channel MOSFET

General Description

The ME60N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology.

This high density process is especially tailored to minimize on-state resistance.

Key Features

  • RDS(ON)≦12mΩ@VGS=10V.
  • RDS(ON)≦17mΩ@VGS=4.5V.
  • Super high density cell design for extremely low RDS(ON).
  • Exceptional on-resistance and maximum DC current capability.

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Datasheet Details

Part number ME60N04
Manufacturer Matsuki
File Size 690.52 KB
Description N-Channel MOSFET
Datasheet download datasheet ME60N04 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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N- Channel 40-V (D-S) MOSFET GENERAL DESCRIPTION The ME60N04 is the N-Channel logic enhancement mode power field effect transistors are produced using high cell density DMOS trench technology. This high density process is especially tailored to minimize on-state resistance. These devices are particularly suited for low voltage application such as LCD inverter, computer power management and DC to DC converter circuits which need low in-line power loss. ME60N04 FEATURES ● RDS(ON)≦12mΩ@VGS=10V ● RDS(ON)≦17mΩ@VGS=4.