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MT4LDT464H - SMALL-OUTLINE DRAM MODULE

Description

The MT4LDT464H (X)(S) and MT8LDT864H (X)(S) are randomly accessed 32MB and 64MB memories organized in a small-outline, x64 configuration.

They are specially processed to operate from 3V to 3.6V for low-voltage memory systems.

Features

  • JEDEC pinout in a 144-pin, small-outline, dual inline memory module (SODIMM).
  • 32MB (4 Meg x 64) and 64MB (8 Meg x 64).
  • High-performance CMOS silicon-gate process.
  • Single +3.3V ±0.3V power supply.
  • All inputs, outputs and clocks are TTL-compatible.
  • 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms.
  • FAST PAGE MODE (FPM) or Extended Data-Out (EDO) PAGE MODE access cycles.
  • Optional Self Refresh Mode (S).

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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4, 8 MEG x 64 DRAM SODIMMs SMALL-OUTLINE DRAM MODULE FEATURES • JEDEC pinout in a 144-pin, small-outline, dual inline memory module (SODIMM) • 32MB (4 Meg x 64) and 64MB (8 Meg x 64) • High-performance CMOS silicon-gate process • Single +3.3V ±0.3V power supply • All inputs, outputs and clocks are TTL-compatible • 4,096-cycle CAS#-BEFORE-RAS# (CBR) refresh distributed across 64ms • FAST PAGE MODE (FPM) or Extended Data-Out (EDO) PAGE MODE access cycles • Optional Self Refresh Mode (S) • Serial presence-detect (SPD) MT4LDT464H (X)(S), MT8LDT864H (X)(S) For the latest data sheet, please refer to the Micron Web site: www.micronsemi.com/datasheets/datasheet.
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