LX5510B datasheet by Microsemi (now Microchip Technology).
| Part number | LX5510B |
|---|---|
| Datasheet | LX5510B_Microsemi.pdf |
| File Size | 252.59 KB |
| Manufacturer | Microsemi (now Microchip Technology) |
| Description | InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
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The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD). With a single supply of 3.3 volts and a low quiescent current of 70mA the power gain is 19dB 2.4 2.5GHz.
| Brand Logo | Part Number | Description | Other Manufacturers |
|---|---|---|---|
 |
LX5510 | InGaP HBT 2.4-2.5 GHz Power Amplifier | Microsemi Corporation |
View all Microsemi (now Microchip Technology) datasheets
| Part Number | Description |
|---|---|
| LX5511 | InGaP HBT 2.3 - 2.5 GHz Power Amplifier |
| LX5516 | InGaP HBT 2.4 - 2.5 GHz Power Amplifier Module |
| LX5518 | InGaP HBT 2.4 - 2.5 GHz Power Amplifier |
| LX5530LQ | High Power 4.5 to 6.0GHz Wireless LAN Power Amplifier |
