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LX5510B - InGaP HBT 2.4 - 2.5 GHz Power Amplifier

General Description

KEY

Key Features

  • Advanced InGaP HBT 2.4.
  • 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current ICQ ~70mA Power Gain ~19dB @ 2.45GHz and Pout = 19dBm Total Current 135mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm).

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www.DataSheet4U.com TM ® LX5510B InGaP HBT 2.4 – 2.5 GHz Power Amplifier P RODUCTION D ATA S HEET DESCRIPTION KEY FEATURES ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ ƒ Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current ICQ ~70mA Power Gain ~19dB @ 2.45GHz and Pout = 19dBm Total Current 135mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm) APPLICATIONS The LX5510B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD).