LX5510B Datasheet PDF

Microsemi LX5510B

The LX5510B is a power amplifier optimized for WLAN applications in the 2.4-2.5 GHz frequency range. The PA is implemented as a two-stage monolithic microwave integrated circuit (MMIC) with active bias and input/output pre-matching. The device is manufactured with an InGaP/GaAs Heterojunction Bipolar Transistor (HBT) IC process (MOCVD).

Part No.	LX5510B
Datasheet	LX5510B Download
Manufacturer	Microsemi
Description	InGaP HBT 2.4 - 2.5 GHz Power Amplifier
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DESCRIPTION

KEY

FEATURES

Advanced InGaP HBT 2.4 – 2.5GHz Operation Single-Polarity 3.3V Supply Low Quiescent Current ICQ ~70mA Power Gain ~19dB @ 2.45GHz and Pout = 19dBm Total Current 135mA for Pout = 19dBm @ 2.45GHz OFDM EVM ~ 3.0% for 64QAM / 54Mbps and Pout = 19dBm Small Footprint (3 x 3 mm2) Low Profile (0.9mm)

APPLICATIONS

With a single supply of 3.3 volts and a low quiescent current of 70mA the power gain is 19dB 2.4 – 2.5GHz. For +19dBm OFDM output power (64QAM, 54Mbps), the PA provides a low EVM (Error-Vector Magnitude) of 3.0%, and consumes 135mA total DC current with the nominal 3.3V bias. The LX5510B is available in a 16pin 3mmx3mm micro-lead package (MLP). The compact footprint, low profile, and excellent thermal capability of the MLP package makes the LX5510B an ideal solution for mediumgain power amplifier requirements for IEEE 802.11b/g applications WWW . Microsemi . C OM IMPORTANT: For the most current data, consult MICROSEMI’s website: IEEE 802.11b...