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MM118-06 Datasheet 3 Phase N-channel Insulated Gate Bipolar Transistor IGBT Bridge

Manufacturer: Microsemi (now Microchip Technology)

Overview: 2830 S. Fairview St. Santa Ana, CA 92704 PH: (714) 979-8220 FAX: (714).

General Description

Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.8 x VCES Junction and Storage Temperature Range (° C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60 A 100 A MM118-12 66 A -55 to +150 50 A 100 A Electrical Parameters, per switch @ 25° C (unless otherwise specified) DESCRIPTION Collector-to-Emitter Breakdown Vo

Key Features

  • Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF.
  • Compact and rugged construction offering weight and space savings.
  • Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to part number, see option below).
  • HPM (Hermetic Power Module).
  • Isolation voltage capability (in reference to the base) in excess of 3kV.
  • Very low thermal resistance.
  • The.

More Datasheets from Microsemi (now Microchip Technology)

Part Number Description
MM118-06F 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
MM118-06L 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
MM118-12 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
MM118-XX 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
MM158 BATTERY CELL BYPASS/SHORTING MODULE
MM196 6 MOSFET Multi-Chip Module

MM118-06 Distributor