Datasheet Details
| Part number | MM118-06 |
|---|---|
| Manufacturer | Microsemi (now Microchip Technology) |
| File Size | 116.51 KB |
| Description | 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE |
| Datasheet |
 MM118-06 Datasheet
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General Description
Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.8 x VCES Junction and Storage Temperature Range (° C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60 A 100 A MM118-12 66 A -55 to +150 50 A 100 A
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Key Features
- Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF.
- Compact and rugged construction offering weight and space savings.
- Available with PC board solderable pins (see mechanical outline below) or threaded terminals (add “ T”suffix to part number, see option below).
- HPM (Hermetic Power Module).
- Isolation voltage capability (in reference to the base) in excess of 3kV.
- Very low thermal resistance.
- The.