Part MM118-06L
Description 3 PHASE N-CHANNEL INSULATED GATE BIPOLAR TRANSISTOR IGBT BRIDGE
Category Transistor
Manufacturer Microsemi
Size 116.51 KB
Microsemi

MM118-06L Overview

Description

Short Circuit Reverse Current (RBSOA) @ Tj= 125° C, VCE= 0.8 x VCES Junction and Storage Temperature Range (° C) Continuous Source Current (parallel Diode) Pulse Source Current (parallel Diode) SYMBOL Imax Tj, Tstg IS ISM MM118-06 64 A -55 to +150 60 A 100 A MM118-12 66 A -55 to +150 50 A 100 A Electrical Parameters, per switch @ 25° C (unless otherwise specified) DESC.

Key Features

  • Available in Low Conduction Loss Class as MM118-xxL or Fast Switching Class as MM118-xxF
  • Compact and rugged construction offering weight and space savings
  • HPM (Hermetic Power Module)
  • Isolation voltage capability (in reference to the base) in excess of 3kV
  • Very low - Thermally matched construction provides excellent temperature and power cycling capability