MRF1001A
MRF1001A is RF & MICROWAVE DISCRETE LOW POWER TRANSISTORS manufactured by Microsemi.
Features
- -
- - Silicon NPN, To-39 packaged VHF/UHF Transistor Ftau = 3.0 Ghz (typ) @ 300MHz, 14v, 90m A,
U max
= 11.5 d B (typ) @ 300 MHz, 14v, 90m A
1. Emitter 2. Base 3. Collector
|S21|
= 11 d B (typ) @ 300 MHz, 14v, 90m A
TO-39
DESCRIPTION
:
Silicon NPN transistor, designed for VHF and UHF equipment. Applications include amplifier; pre-driver, driver, and output stages. Also suitable for oscillator and frequency-multiplier functions.
ABSOLUTE MAXIMUM RATINGS (Tcase = 25°C)
Symbol VCEO VCBO VEBO IC Parameter Collector-Emitter Collector-Base Voltage Emitter-Base Voltage Collector Current Value 20 30 3.5 200 Unit Vdc Vdc Vdc m A
Thermal Data
D Total Device Dissipation @ TA = 25ºC Derate above 25ºC 1.0 5.71 Watts m W/ ºC
MSC1311.PDF 10-25-99
ELECTRICAL SPECIFICATIONS (Tcase = 25°C)
STATIC (off)
Symbol BVCEO BVEBO BVCBO ICBO VCE(sat) Test Conditions Min. Collector-Emitter Breakdown Voltage (IC = 5.0 m Adc) Emitter-Base Breakdown Voltage (IC= 0.1 m Adc) Collector-Base Breakdown Voltage (IC=1.0 m Adc) Collector-Base (VCB = 10 Vdc) Collector-Emitter Saturation Voltage (IC = 50m A, IC/IB = 10) 20 3.5 30 Value Typ. 50 100 Max. Unit Vdc Vdc Vdc µA m V
(on)
HFE DC Current Gain (IC = 50 m Adc, VCE = 5.0 Vdc) 50 300
- DYNAMIC
Symbol f T Test Conditions Min. Current-Gain
- Bandwidth Product (IC = 90 m Adc, VCE = 14 Vdc, f = 300 MHz) Value Typ. 3.0 Max. Unit GHz
MSC1311.PDF 10-25-99
FUNCTIONAL
Symbol Test Conditions Min. Maximum Unilateral Gain (1) Maximum Available Gain Insertion Gain IC = 90 m Adc, VCE = 14Vdc, f = 300 MHz IC = 90 m Adc, VCE = 14Vdc, f = 300 MHz IC = 90 m Adc, VCE = 14Vdc, f = 300 MHz Value Typ. 11.5 11.7 11.13 Max. Unit d B d B d B
U max
|S21|
Table 1. mon Emitter S-Parameters, @ VCE = 14 V, IC = 90 m A f
S11
(MHz)
100 200 300 400 500 600 700 800 900...
