LS830 - Low Leakage

Micross

Key Features

a 5mV offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).

LS830 low leakage by Micross - Datasheet Preview

Datasheet Details

Part number	LS830
Manufacturer	Micross
File Size	295.67 KB
Description	Low Leakage
Datasheet	LS830 Datasheet

📁 Similar Datasheet

Part Number	Description	Manufacturer
LS8397	STEPPER MOTOR CONTROLLER	LSI
LS80C52	(LS80C5x) CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER	Intel Corporation
LS80C54	(LS80C5x) CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER	Intel Corporation
LS80C58	(LS80C5x) CHMOS SINGLE-CHIP 8-BIT MICROCONTROLLER	Intel Corporation
lS80C86	CMOS 16-Bit Microprocessor	Intersil Corporation

Other Datasheets by Micross

Part Number	Description
LS831	Low Leakage
LS832	Low Leakage
LS833	Low Leakage
LS840	Low Drift Monolithic Dual JFET
LS841	Low Drift Monolithic Dual JFET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text

LS830 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS830 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS830 features a 5mV offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES ULTRA LOW DRIFT | V GS1‐2 / T| ≤ 5µV/°C TYP. ULTRA LOW LEAKGE IG = 80fA TYP. LOW NOISE en = 70nV/√Hz TYP. LOW CAPACITANCE CISS = 3pF MAX.