LS833 - Low Leakage

Micross

Key Features

a 25mV offset and 75-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).

LS833 low leakage by Micross - Datasheet Preview

Datasheet Details

Part number	LS833
Manufacturer	Micross
File Size	295.40 KB
Description	Low Leakage
Datasheet	LS833 Datasheet

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Other Datasheets by Micross

Part Number	Description
LS830	Low Leakage
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LS832	Low Leakage
LS840	Low Drift Monolithic Dual JFET
LS841	Low Drift Monolithic Dual JFET

Full PDF Text Transcription (Reference)

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LS833 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS833 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS833 features a 25mV offset and 75-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES LOW DRIFT | V GS1‐2 / T| ≤75µV/°C LOW LEAKAGE IG = 0.5pA MAX. LOW NOISE en = 70nV/√Hz TYP. LOW CAPACITANCE CISS = 3pF MAX.