LS831
LS831 is Low Leakage manufactured by Micross.
Features a 25m V offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). Features
ULTRA LOW DRIFT | V GS1‐2 / T| ≤10µV/°C ULTRA LOW LEAKAGE IG = 80f A TYP. LOW NOISE en = 70n V/√Hz TYP. LOW CAPACITANCE CISS = 3p F MAX. ABSOLUTE MAXIMUM RATINGS @ 25°C (unless otherwise noted) Maximum Temperatures Storage Temperature ‐65°C to +150°C Operating Junction Temperature +150°C Maximum Voltage and Current for Each Transistor - Note 1 ‐VGSS Gate Voltage to Drain or Source 40V ‐VDSO Drain to Source Voltage 40V ‐IG(f) Gate Forward Current 10m A ‐IG Gate Reverse Current 10µA Maximum Power Dissipation Device Dissipation @ Free Air - Total 400m W @ +125°C MATCHING CHARACTERISTICS @ 25°C UNLESS OTHERWISE NOTED SYMBOL CHARACTERISTICS VALUE UNITS CONDITIONS | V GS1‐2 / T| max. DRIFT VS. 10 µV/°C VDG=10V, ID=30µA TEMPERATURE TA=‐55°C to +125°C | V GS1‐2 | max. OFFSET VOLTAGE 25 m V VDG=10V, ID=30µA TYP. 60 ‐‐ 300 100 0.6 ‐‐ 1 2 ‐‐ ‐‐ ‐‐ ‐‐ 5 1 ‐‐ ‐‐ 90 90 ‐‐ 20 ‐‐ ‐‐ ‐‐ MAX. ‐‐ ‐‐ 500 200 3 10 5 4.5 4 0.1 0.1 0.2 0.5 ‐‐ 5 0.5 ‐‐ ‐‐ 1 70 3 1.5 0.1 UNITS V V µmho µmho % m A % V V p A n A p A n A p A µmho µmho d B CONDITIONS VDS = 0 ID=1n A I G= 1n A ID= 0 IS= 0 VDG= 10V VGS= 0V f = 1k Hz VDG= 10V ID= 30µA f = 1k Hz VDG= 10V VGS= 0V VDS= 10V ID= 1n A VDS=10V ID=30µA VDG= 10V ID= 30µA TA= +125°C VDS =0 VGS= 0V, VGS= ‐20V, TA= +125°C VGG = 20V VDG= 10V VGS= 0V VDG= 10V ID= 30µA ∆VDS = 10 to 20V ID=30µA ∆VDS = 5 to 10V ID=30µA VDS= 10V VGS= 0V RG= 10MΩ f= 100Hz NBW= 6Hz VDS=10V ID=30µA f=...
