LS831 - Low Leakage

Micross

Key Features

a 25mV offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information).

LS831 low leakage by Micross - Datasheet Preview

Datasheet Details

Part number	LS831
Manufacturer	Micross
File Size	295.93 KB
Description	Low Leakage
Datasheet	LS831 Datasheet

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Other Datasheets by Micross

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Full PDF Text Transcription (Reference)

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LS831 MONOLITHIC DUAL N-CHANNEL JFET Linear Systems Ultra Low Leakage Low Drift Monolithic Dual JFET The LS831 is a high-performance monolithic dual JFET featuring extremely low noise, tight offset voltage and low drift over temperature specifications, and is targeted for use in a wide range of precision instrumentation applications. The LS831 features a 25mV offset and 10-µV/°C drift. The 8 Pin P-DIP and 8 Pin SOIC provide ease of manufacturing, and the symmetrical pinout prevents improper orientation. (See Packaging Information). FEATURES ULTRA LOW DRIFT | V GS1‐2 / T| ≤10µV/°C ULTRA LOW LEAKAGE IG = 80fA TYP. LOW NOISE en = 70nV/√Hz TYP. LOW CAPACITANCE CISS = 3pF MAX.