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MGFC39V5867 Datasheet C band internally matched power GaAs FET

Manufacturer: Mitsubishi Electric

General Description

The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 – 6.75 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Overview

< C band internally matched power GaAs FET > MGFC39V5867 5.8 – 6.

Key Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=8W (TYP. ) @f=5.8.
  • 6.75GHz.
  • High power gain GLP=9dB (TYP. ) @f=5.8.
  • 6.75GHz.