MGFC39V5867
MGFC39V5867 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
< C band internally matched power GaAs FET >
- 6.75 GHz BAND / 8W
DESCRIPTION
The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8
- 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
Features
Class A operation Internally matched to 50(ohm) system
- High output power
P1dB=8W (TYP.) @f=5.8
- 6.75GHz
- High power gain
GLP=9dB (TYP.) @f=5.8
- 6.75GHz
APPLICATION
- VSAT
2MIN
12.9 +/-0.2
2MIN
OUTLINE DRAW ING Unit : millimeters
21.0 +/-0.3 (1) 0.6 +/-0.15
(2) (2) R-1.6
(3) 10.7 17.0 +/-0.2
0.1 2.6 +/-0.2
4.5 +/-0.4 1.6
REMENDED BIAS CONDITIONS
- VDS=10V
-...
