MGFC39V5867 Description
The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
MGFC39V5867 Key Features
- High output power
- 6.75GHz
- High power gain
- 6.75GHz
- VDS=10V
- ID=2.4A
- RG=50ohm