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MGFC39V5867 Datasheet

Manufacturer: Mitsubishi Electric
MGFC39V5867 datasheet preview

Datasheet Details

Part number MGFC39V5867
Datasheet MGFC39V5867_MitsubishiElectric.pdf
File Size 100.28 KB
Manufacturer Mitsubishi Electric
Description C band internally matched power GaAs FET
MGFC39V5867 page 2 MGFC39V5867 page 3

MGFC39V5867 Overview

The MGFC39V5867 is an internally impedance-matched GaAs power FET especially designed for use in 5.8 6.75 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.

MGFC39V5867 Key Features

  • High output power
  • 6.75GHz
  • High power gain
  • 6.75GHz
  • VDS=10V
  • ID=2.4A
  • RG=50ohm
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