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MGFC47A4450 - C band internally matched power GaAs FET

General Description

The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4

5.0 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Key Features

  • Class AB operation Internally matched to 50(ohm) system.
  • High output power P1dB=50W (TYP. ) @f=4.4.
  • 5.0GHz.
  • High power gain GLP=10.5dB (TYP. ) @f=4.4.
  • 5.0GHz.
  • High power added efficiency PAE=40% (TYP. ) @f=4.4.
  • 5.0GHz.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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< C band internally matched power GaAs FET > MGFC47A4450 4.4 – 5.0 GHz BAND / 50W DESCRIPTION The MGFC47A4450 is an internally impedance-matched GaAs power FET especially designed for use in 4.4 – 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class AB operation Internally matched to 50(ohm) system  High output power P1dB=50W (TYP.) @f=4.4 – 5.0GHz  High power gain GLP=10.5dB (TYP.) @f=4.4 – 5.0GHz  High power added efficiency PAE=40% (TYP.) @f=4.4 – 5.0GHz APPLICATION  Radio Link 2MIN . 17 .4 +/-0.2 8.0+/-0.2 2.4 2 MIN. OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 (1) (2 ) (3) 0 .7 +/-0.15 20 .4 +/-0.2 1 6.7 1.3 15.8 4.7 m ax. 2 .3 +/-0 .2 0.1+/-0.05 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=9.