MGFC47A4450
MGFC47A4450 is C band internally matched power GaAs FET manufactured by Mitsubishi Electric.
DESCRIPTION
The MGFC47A4450 is an internally impedance-matched Ga As power FET especially designed for use in 4.4
- 5.0 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability.
FEATURES
Class AB operation Internally matched to 50(ohm) system
- High output power
P1d B=50W (TYP.) @f=4.4
- 5.0GHz
- High power gain
GLP=10.5d B (TYP.) @f=4.4
- 5.0GHz
- High power added efficiency
PAE=40% (TYP.) @f=4.4
- 5.0GHz
APPLICATION
- Radio Link
2MIN .
17 .4 +/-0.2 8.0+/-0.2 2.4
2 MIN.
OUTLINE DRAWING
Unit : millimeters
2 4+/-0.3
(1)
(2 )
(3) 0 .7 +/-0.15
20 .4 +/-0.2
1 6.7
1.3 15.8 4.7 m ax.
2 .3 +/-0 .2 0.1+/-0.05
REMENDED BIAS CONDITIONS
- VDS=10V
- ID=9.8A
- RG=10ohm
Absolute maximum ratings (Ta=25C)
Symbol
Parameter
Ratings
VGDO Gate to drain breakdown voltage
-20
VGSO Gate to source breakdown...