Datasheet4U Logo Datasheet4U.com

MGFC47A7785 - C band internally matched power GaAs FET

Description

The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7

8.5 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Class A operation Internally matched to 50(ohm) system.
  • High output power P1dB=46.7dBm (TYP. ) @f=7.7.
  • 8.5GHz.
  • High power gain GLP=5.7dB (TYP. ) @f=7.7.
  • 8.5GHz.
  • High power added efficiency PAE=30% (TYP. ) @f=7.7.
  • 8.5GHz.

📥 Download Datasheet

Datasheet preview – MGFC47A7785

Datasheet Details

Part number MGFC47A7785
Manufacturer Mitsubishi Electric
File Size 126.52 KB
Description C band internally matched power GaAs FET
Datasheet download datasheet MGFC47A7785 Datasheet
Additional preview pages of the MGFC47A7785 datasheet.

📁 Similar Datasheet

  • MGFC47B3538B - C band Internally Matched Power GaAs FET (Mitsubishi Electric Semiconductor)
  • MGFC47V5864 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC40V3742A - 3.7 - 4.2GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)
  • MGFC40V4450A - 4.4 - 5.0GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)
  • MGFC40V5258 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC40V5964A - 5.9 - 6.4GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)
  • MGFC40V6472 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC40V6472A - 6.4 - 7.2GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)
  • MGFC40V7177 - C band internally matched power GaAs FET (Mitsubishi)
  • MGFC40V7177A - 7.1 - 7.7GHz BAND 10W INTERNALLY MATCHED GaAs FET (Mitsubishi)
Other Datasheets by Mitsubishi Electric

Full PDF Text Transcription

Click to expand full text
< C band internally matched power GaAs FET > MGFC47A7785 7.7 – 8.5 GHz BAND / 47W DESCRIPTION The MGFC47A7785 is an internally impedance-matched GaAs power FET especially designed for use in 7.7 – 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system  High output power P1dB=46.7dBm (TYP.) @f=7.7 – 8.5GHz  High power gain GLP=5.7dB (TYP.) @f=7.7 – 8.5GHz  High power added efficiency PAE=30% (TYP.) @f=7.7 – 8.5GHz APPLICATION  Solid-state power amplifier for satellite earth-station communication transmitter and VSAT 2MIN . 17 .4 +/-0.2 8.0+/-0.2 2.4 2 MIN. OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 (1) (2 ) (3) 0 .7 +/-0.15 20 .4 +/-0.2 1 6.7 1.3 15.8 4.7 m ax. 2 .
Published: |