MGFC47A7785 Datasheet | Mitsubishi Electric

DESCRIPTION The MGFC47A7785 is an internally impedance-matched Ga As power FET especially designed for use in 7.7 - 8.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Class A operation Internally matched to 50(ohm) system - High output power P1d B=46.7d Bm (TYP.) @f=7.7 - 8.5GHz - High power gain GLP=5.7d B (TYP.) @f=7.7 - 8.5GHz - High power added efficiency PAE=30% (TYP.) @f=7.7 - 8.5GHz APPLICATION - Solid-state power amplifier for satellite earth-station munication transmitter and VSAT 2MIN . 17 .4 +/-0.2 8.0+/-0.2 2.4 2 MIN. OUTLINE DRAWING Unit : millimeters 2 4+/-0.3 (1) (2 ) (3) 0 .7 +/-0.15 20 .4 +/-0.2 1 6.7 1.3 15.8 4.7 m ax. 2 .3 +/-0 .2 0.1+/-0.05 REMENDED BIAS CONDITIONS - VDS=10V - ID=9.8A - RG=10ohm Absolute maximum ratings (Ta=25C) Symbol Parameter Ratings VGDO Gate to drain breakdown...