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MGFK44A4045 - power GaAs FET

Description

The MGFK44A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0

14.5 GHz band amplifiers.

The hermetically sealed metal-ceramic package guarantees high reliability.

Features

  • Internally impedance matched.
  • High output power P1dB=44dBm (TYP. ) @f=14.0.
  • 14.5GHz.
  • High linear power gain GLP=6.0dB (TYP. ) @f=14.0.
  • 14.5GHz.

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Datasheet preview – MGFK44A4045

Datasheet Details

Part number MGFK44A4045
Manufacturer Mitsubishi Electric
File Size 172.17 KB
Description power GaAs FET
Datasheet download datasheet MGFK44A4045 Datasheet
Additional preview pages of the MGFK44A4045 datasheet.

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Full PDF Text Transcription

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< X/Ku band internally matched power GaAs FET > MGFK44A4045 14.0 – 14.5 GHz BAND / 25W DESCRIPTION The MGFK44A4045 is an internally impedance-matched GaAs power FET especially designed for use in 14.0 – 14.5 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high reliability. FEATURES Internally impedance matched  High output power P1dB=44dBm (TYP.) @f=14.0 – 14.5GHz  High linear power gain GLP=6.0dB (TYP.) @f=14.0 – 14.5GHz APPLICATION  For use in 14.0 – 14.5 GHz band amplifiers QUALITY GRADE  IG 2MIN 17.4 +/- 0.2 8.0 +/- 0.2 2MIN OUTLINE R1.2 24 +/- 0.3 unit : mm 0.6 +/- 0.15 (1 ) (2 ) (3 ) 20.4 +/- 0.2 16.7 0.1 +/- 0.05 2.4 +/- 0.2 4.3 +/- 0.4 1.4 RECOMMENDED BIAS CONDITIONS  VDS=10V  ID=6.
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