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MT4435L2 - P-Channel Enhancement Mode Field Effect Transistor

Download the MT4435L2 datasheet PDF. This datasheet also covers the MT4435L2_Mos variant, as both devices belong to the same p-channel enhancement mode field effect transistor family and are provided as variant models within a single manufacturer datasheet.

Key Features

  • Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package.

📥 Download Datasheet

Note: The manufacturer provides a single datasheet file (MT4435L2_Mos-Tech.pdf) that lists specifications for multiple related part numbers.

Datasheet Details

Part number MT4435L2
Manufacturer Mos-Tech
File Size 279.26 KB
Description P-Channel Enhancement Mode Field Effect Transistor
Datasheet download datasheet MT4435L2 Datasheet

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
Mos-Tech Semiconductor Co.,LTD. MT4435L2 P-Channel Enhancement Mode Field Effect Transistor FEATURES ● ● ● ● Super high dense cell design for low RDS(ON) Rugged and reliable Simple drive requirement TO-252 package PRODUCT SUMMARY VDSS -30V ID -7A RDS(ON) (mΩ) Typ 98@ VGS=-10V 130 @ VGS=-4.5V D S NOTE：The MT4435L2 is available in a lead-free package G G S D ABSOLUTE MAXIMUM RATINGS（TA=25℃ unless otherwise noted） Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuousª@Tj=125℃ - Pulse d b Drain-source Diode Forward Currentª Maximum Power Dissipationª Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ,TSTG Limit -30 ±20 -7 -24 -1.