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MMBT2907LT1 - General Purpose Transistors

Key Features

  • ould always be observed in order to minimize the thermal stress to which the devices are subjected.
  • Always preheat the device.
  • The delta temperature between the preheat and soldering should be 100°C or less.
  • When preheating and soldering, the temperature of the leads and the case must not exceed the maximum temperature ratings as shown on the data sheet. When using infrared heating with the reflow soldering method, the difference shall be a maximum of 10°C.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MMBT2907LT1/D General Purpose Transistors PNP Silicon 1 BASE COLLECTOR 3 MMBT2907LT1 MMBT2907ALT1* *Motorola Preferred Device MAXIMUM RATINGS Rating Collector – Emitter Voltage Collector – Base Voltage Emitter – Base Voltage Collector Current — Continuous Symbol VCEO VCBO VEBO IC 2907 –40 –60 –5.0 –600 2 EMITTER 1 3 2907A –60 Unit Vdc Vdc Vdc mAdc 2 CASE 318 – 08, STYLE 6 SOT– 23 (TO – 236AB) THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board(1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate,(2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD Max 225 1.