charge controlled. The lengths of various switching intervals (∆t) are determined by how fast the FET input capacitance can be charged by current from the generator. The published capacitance data is difficult to use for calculating rise and fall because drain.
gate capacitance varies greatly with applied voltage. Accordingly, gate charge data is used. In most cases, a satisfactory estimate of average input current (IG(AV)) can be made from a rudimentary analysis of the drive circuit so t.
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MOTOROLA Designer's SEMICONDUCTOR TECHNICAL DATA Order this document by MMDF3C03HD/D ™ Data Sheet Medium Power Surface Mount Products Complementary TMOS Field Effect Tran...
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dium Power Surface Mount Products Complementary TMOS Field Effect Transistors MMDF3C03HD Motorola Preferred Device MiniMOS devices are an advanced series of power MOSFETs which utilize Motorola’s High Cell Density HDTMOS process. These miniature surface mount MOSFETs feature ultra low RDS(on) and true logic level performance. They are capable of withstanding high energy in the avalanche and commutation modes and the drain–to–source diode has a very low reverse recovery time. MiniMOS devices are designed for use in low voltage, high speed switching applications where power efficiency is important.
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MMDF3C03HD Datasheet
