MTB3N120E - TMOS POWER FET

Product Overview

Motorola

Part number	MTB3N120E
Manufacturer	Motorola
File Size	322.18 KB
Description	TMOS POWER FET
Datasheet	MTB3N120E Datasheet
Additional preview pages of the MTB3N120E datasheet.

ing speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching losses. 2800 2400 C,.

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Published: Sep 13, 2005 |