MTD2N50E Datasheet Tmos Power Fet 2.0 Amperes 500 Volts Rds(on) = 3.6 Ohm

Manufacturer: Motorola Semiconductor (now NXP Semiconductors)

Overview: MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MTD2N50E/D ™ Data Sheet TMOS E-FET.

Datasheet Details

Part number	MTD2N50E
Manufacturer	Motorola Semiconductor (now NXP Semiconductors)
File Size	299.02 KB
Description	TMOS POWER FET 2.0 AMPERES 500 VOLTS RDS(on) = 3.6 OHM
Datasheet	MTD2N50E_Motorola.pdf

Key Features

would maintain a value of unity regardless of the switching speed. The circuit used to obtain the data is constructed to minimize common inductance in the drain and gate circuit loops and is believed readily achievable with board mounted components. Most power electronic loads are inductive; the data in the figure is taken with a resistive load, which approximates an optimally snubbed inductive load. Power MOSFETs may be safely operated into an inductive load; however, snubbing reduces switching.

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