NCE3095G Datasheet | NCE Power Semiconductor

http://.ncepower. NCE N-Channel Enhancement Mode Power MOSFET Description The NCE3095G uses advanced trench technology and design General Features to provide excellent RDS(ON) with low gate charge. It can be - VDS =30V,ID =95A used in a wide variety of applications. RDS(ON)=3.5mΩ (typical) @ VGS=10V Application RDS(ON)=5.3mΩ (typical) @ VGS=4.5V - DC/DC Converter - High density cell design for ultra low Rdson - Ideal for high-frequency switching and synchronous - Very low on-resistance RDS(on) rectification - Good stability and uniformity with high EAS 100% UIS TESTED! - 150 °C operating temperature 100% ΔVds TESTED! - Pb-free lead plating DFN 5X6 Top View Bottom View Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package DFN 5x6-8L Reel Size - Tape width - Quantity -...