NCE40P05S
Description
The NCE40P05S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.
Key Features
- VDS =-40V,ID =-5.3A RDS(ON) <80mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.5V - High density cell design for ultra low Rdson
- Fully characterized avalanche voltage and current
- Excellent package for good heat dissipation
