NCE40P07S - P-Channel Enhancement Mode Power MOSFET

Description

The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =-40V,ID =-6.2A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE40P07S
Manufacturer	NCE Power Semiconductor
File Size	362.48 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40P07S Datasheet
Additional preview pages of the NCE40P07S datasheet.

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http://www.ncepower.com Pb Free Product NCE40P07S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P07S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-6.2A RDS(ON) <25mΩ @ VGS=-10V RDS(ON) <30mΩ @ VGS=-4.

Published: Jun 2, 2018 |