NCE40P05Y - P-Channel Enhancement Mode Power MOSFET

Description

The NCE40P05Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =-40V,ID =-5.3A RDS(ON).

NCE Power Semiconductor

📥 Download Datasheet

Datasheet Details

Part number	NCE40P05Y
Manufacturer	NCE Power Semiconductor
File Size	264.95 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40P05Y Datasheet
Additional preview pages of the NCE40P05Y datasheet.

📁 Similar Datasheet

NCE4060K - N-Channel 40V MOSFET (VBsemi)
NCE40H12K - N-Channel MOSFET (VBsemi)
NCE4503 - SOP8 Plastic-Encapsulate MOSFETS (TY Semiconductor)
NCE4614 - Dual-Channel MOSFET (VBsemi)
NCE0103 - N-Channel 100V MOSFET (VBsemi)
NCE0157A2 - N-Channel Power MOSFET (VBsemi)
NCE01H16 - N-Channel MOSFET (VBsemi)
NCE02H10T - N-Channel Enhancement Mode Power MOSFET (H&M Semiconductor)
NCE1520 - N-Channel 150-V MOSFET (VBsemi)
NCE1540KA - N-Channel 150V MOSFET (VBsemi)

Other Datasheets by NCE Power Semiconductor

NCE40P05S - P-Channel Enhancement Mode Power MOSFET
NCE40P06J - P-Channel Enhancement Mode Power MOSFET
NCE40P06S - P-Channel Enhancement Mode Power MOSFET
NCE40P07S - P-Channel Enhancement Mode Power MOSFET
NCE40P13S - P-Channel Enhancement Mode Power MOSFET
NCE40P20Q - P-Channel Enhancement Mode Power MOSFET
NCE40P40D - P-Channel Enhancement Mode Power MOSFET
NCE40P40K - P-Channel Enhancement Mode Power MOSFET

Full PDF Text Transcription

Click to expand full text

http://www.ncepower.com Pb Free Product NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-5.3A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.

Published: Jun 2, 2018 |