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NCE40P05Y - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE40P05Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-40V,ID =-5.3A RDS(ON).

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Datasheet Details

Part number NCE40P05Y
Manufacturer NCE Power Semiconductor
File Size 264.95 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE40P05Y Datasheet

Full PDF Text Transcription for NCE40P05Y (Reference)

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http://www.ncepower.com Pb Free Product NCE40P05Y NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P05Y uses advanced trench technology and design to prov...

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ption The NCE40P05Y uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-40V,ID =-5.3A RDS(ON) <85mΩ @ VGS=-10V RDS(ON) <120mΩ @ VGS=-4.