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NCE40P06S - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-40V,ID =-6A RDS(ON).

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Datasheet Details

Part number NCE40P06S
Manufacturer NCE Power Semiconductor
File Size 367.64 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE40P06S Datasheet

Full PDF Text Transcription for NCE40P06S (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE40P06S. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to prov...

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ption The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.