NCE40P06S - P-Channel Enhancement Mode Power MOSFET

Description

The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Features

VDS =-40V,ID =-6A RDS(ON).

NCE Power Semiconductor

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Datasheet Details

Part number	NCE40P06S
Manufacturer	NCE Power Semiconductor
File Size	367.64 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE40P06S Datasheet
Additional preview pages of the NCE40P06S datasheet.

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http://www.ncepower.com Pb Free Product NCE40P06S NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06S uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications.

Published: Jun 2, 2018 |