NCE40P06J Key Features
- VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V
- Advanced trench MOSFET process technology
- Ultra low on-resistance with low gate charge
| Part Number | Description |
|---|---|
| NCE40P06S | P-Channel Enhancement Mode Power MOSFET |
| NCE40P05S | P-Channel Enhancement Mode Power MOSFET |
| NCE40P05Y | P-Channel Enhancement Mode Power MOSFET |
| NCE40P07S | P-Channel Enhancement Mode Power MOSFET |
| NCE40P13S | P-Channel Enhancement Mode Power MOSFET |