NCE40P06J - P-Channel Enhancement Mode Power MOSFET
NCE Power Semiconductor
General Description
The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.
Key Features
VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V
D G
S Schematic diagram.
Full PDF Text Transcription for NCE40P06J (Reference)
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http://www.ncepower.com Pb Free Product NCE40P06J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06J uses advanced trench technology to provide excelle...
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ption The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.
NCE40P06J Datasheet
