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NCE40P06J - P-Channel Enhancement Mode Power MOSFET

Description

The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Features

  • VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V D G S Schematic diagram.
  • Advanced trench MOSFET process technology.
  • Ultra low on-resistance with low gate charge.

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Datasheet preview – NCE40P06J

Datasheet Details

Part number NCE40P06J
Manufacturer NCE Power Semiconductor
File Size 290.11 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE40P06J Datasheet
Additional preview pages of the NCE40P06J datasheet.

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Full PDF Text Transcription

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http://www.ncepower.com Pb Free Product NCE40P06J NCE P-Channel Enhancement Mode Power MOSFET Description The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications. General Features ● VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.
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