• Part: NCE40P06J
  • Description: P-Channel Enhancement Mode Power MOSFET
  • Category: MOSFET
  • Manufacturer: NCE Power Semiconductor
  • Size: 290.11 KB
NCE40P06J Datasheet (PDF) Download
NCE Power Semiconductor
NCE40P06J

Description

The NCE40P06J uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages .This device is suitable for use as a load switching application and a wide variety of other applications.

Key Features

  • VDS = -40V,ID = -6A RDS(ON) < 33mΩ @ VGS=-2.5V RDS(ON) < 45mΩ @ VGS=-4.5V D G S - Advanced trench MOSFET process technology
  • Ultra low on-resistance with low gate charge