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NCE4403 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE4403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge.

It can be used in a wide variety of applications.

Key Features

  • VDS =-30V,ID =-6.1A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 61mΩ @ VGS=-4.5V RDS(ON).

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Datasheet Details

Part number NCE4403
Manufacturer NCE Power Semiconductor
File Size 393.17 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4403 Datasheet

Full PDF Text Transcription for NCE4403 (Reference)

Note: Below is a high-fidelity text extraction (approx. 800 characters) for NCE4403. For precise diagrams, and layout, please refer to the original PDF.

http://www.ncepower.com Pb Free Product NCE4403 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4403 uses advanced trench technology and design to provide ...

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ion The NCE4403 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. It can be used in a wide variety of applications. General Features ● VDS =-30V,ID =-6.1A RDS(ON) < 46mΩ @ VGS=-10V RDS(ON) < 61mΩ @ VGS=-4.5V RDS(ON) <117mΩ @ VGS=-2.