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NCE4435 - P-Channel Enhancement Mode Power MOSFET

General Description

The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Key Features

  • VDS = -30V,ID = -9.1A S Schematic diagram RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
  • High power and current handing capability.
  • Lead free product is acquired.
  • Surface mount package.

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Datasheet Details

Part number NCE4435
Manufacturer NCE Power Semiconductor
File Size 364.87 KB
Description P-Channel Enhancement Mode Power MOSFET
Datasheet download datasheet NCE4435 Datasheet

Full PDF Text Transcription for NCE4435 (Reference)

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NCE4435 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation wi...

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hnology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. D G General Features ● VDS = -30V,ID = -9.1A S Schematic diagram RDS(ON) < 35mΩ @ VGS=-4.

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