Datasheet Summary
NCE P-Channel Enhancement Mode Power MOSFET
Description
The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.
General Features
- VDS = -30V,ID = -9.1A
S Schematic diagram
RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V
- High power and current handing capability
- Lead free product is acquired
- Surface mount package
Application
- Battery Switch
- Load switch
- Power management
Only
UseMarking and pin assignment times
SOP-8 top view g Package Marking and Ordering Information n Device Marking
Device
Device Package e NCE4435
SOP-8
Reel Size Ø330mm
Tape width 12mm...