NCE4435 - P-Channel Enhancement Mode Power MOSFET

Description

The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V.

Features

VDS = -30V,ID = -9.1A S Schematic diagram RDS(ON) < 35mΩ @ VGS=-4.5V RDS(ON) < 20mΩ @ VGS=-10V.
High power and current handing capability.
Lead free product is acquired.
Surface mount package.

NCE Power Semiconductor

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Datasheet Details

Part number	NCE4435
Manufacturer	NCE Power Semiconductor
File Size	364.87 KB
Description	P-Channel Enhancement Mode Power MOSFET
Datasheet	NCE4435 Datasheet
Additional preview pages of the NCE4435 datasheet.

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Full PDF Text Transcription

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NCE4435 NCE P-Channel Enhancement Mode Power MOSFET Description The NCE4435 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 4.5V. D G General Features ● VDS = -30V,ID = -9.1A S Schematic diagram RDS(ON) < 35mΩ @ VGS=-4.

Published: May 22, 2015 |