NCE6602 Datasheet | NCE Power Semiconductor

http://.ncepower. Pb Free Product NCE N and P-Channel Enhancement Mode Power MOSFET Description The NCE6602 uses advanced trench technology to provide excellent RDS(ON), low gate charge. This device is suitable for use as a Battery protection or in other Switching application. General Features - N-Channel - VDS = 30V,ID = 3.5A RDS(ON) <58mΩ @ VGS=10V RDS(ON) < 95mΩ @ VGS=4.5V - P-Channel VDS = -30V,ID = -2.7A RDS(ON) < 100mΩ @ VGS=-10V RDS(ON) < 150mΩ @ VGS=-4.5V - Low On-Resistance - Low Input Capacitance - Fast Switching Speed - Low Input/Output Leakage N-channel P-channel Schematic diagram Marking and pin Assignment TSOT23-6L top view Package Marking and Ordering Information Device Marking Device Device Package Reel Size TSOT23-6L Ø180mm...