NCEP020N30QU Datasheet | NCE Power Semiconductor

http://.ncepower. NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of General Features - VDS =30V,ID =70A RDS(ON)=1.75mΩ (typical) @ VGS=10V RDS(ON)=3.0mΩ (typical) @ VGS=4.5V RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification - Excellent gate charge x RDS(on) product(FOM) - Very...