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NCEP023N85D

Manufacturer: NCE Power Semiconductor

NCEP023N85D datasheet by NCE Power Semiconductor.

This datasheet includes multiple variants, all published together in a single manufacturer document.

NCEP023N85D datasheet preview

NCEP023N85D Datasheet Details

Part number NCEP023N85D
Datasheet NCEP023N85D NCEP023N85 Datasheet (PDF)
File Size 408.76 KB
Manufacturer NCE Power Semiconductor
Description N-Channel Power MOSFET
NCEP023N85D page 2 NCEP023N85D page 3

NCEP023N85D Overview

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP023N85D Key Features

  • VDS =85V,ID =260A
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • Tape width
  • Quantity
NCE Power Semiconductor logo - Manufacturer

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NCEP023N85D Distributor

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