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NCEP023N85D Datasheet

N-channel Power MOSFET

Manufacturer: NCE Power Semiconductor

This datasheet includes multiple variants, all published together in a single manufacturer document.

NCEP023N85D Overview

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.

NCEP023N85D Key Features

  • VDS =85V,ID =260A
  • Excellent gate charge x RDS(on) product(FOM)
  • Very low on-resistance RDS(on)
  • 175 °C operating temperature
  • Pb-free lead plating
  • Tape width
  • Quantity

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