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NCEP023N85D - N-Channel Power MOSFET

This page provides the datasheet information for the NCEP023N85D, a member of the NCEP023N85 N-Channel Power MOSFET family.

Datasheet Summary

Description

The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =85V,ID =260A RDS(ON)=2.0mΩ , typical (TO-220)@ VGS=10V RDS(ON)=1.8mΩ , typical (TO-263)@ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating 100% UIS TESTED! 100% ∆Vds TESTED! TO-220 TO-263 Schematic Diagram Package Marking and Ordering Information Device Marking Device Device Package NCEP023N85 NCEP023N85 TO-220 NCEP023N85D NCEP023N85D TO-263 Reel Size - Tape width.

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Datasheet Details

Part number NCEP023N85D
Manufacturer NCE Power Semiconductor
File Size 408.76 KB
Description N-Channel Power MOSFET
Datasheet download datasheet NCEP023N85D Datasheet
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NCEP023N85, NCEP023N85D NCE N-Channel Super Trench II Power MOSFET Description The series of devices uses Super Trench II technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. Application ● DC/DC Converter ●Ideal for high-frequency switching and synchronous rectification General Features ● VDS =85V,ID =260A RDS(ON)=2.0mΩ , typical (TO-220)@ VGS=10V RDS(ON)=1.
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