Datasheet4U Logo Datasheet4U.com

NCEP0225G - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP0225G uses Super Trench technology that is General

Features

  • uniquely optimized to provide the most efficient high.
  • VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for.
  • Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification.
  • Very low on-resistance RDS(on).

📥 Download Datasheet

Datasheet preview – NCEP0225G

Datasheet Details

Part number NCEP0225G
Manufacturer NCE Power Semiconductor
File Size 382.47 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP0225G Datasheet
Additional preview pages of the NCEP0225G datasheet.

📁 Similar Datasheet

Other Datasheets by NCE Power Semiconductor

Full PDF Text Transcription

Click to expand full text
http://www.ncepower.com NCEP0225G NCE N-Channel Super Trench Power MOSFET Description The NCEP0225G uses Super Trench technology that is General Features uniquely optimized to provide the most efficient high ● VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for ● Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification.
Published: |