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NCEP0225G - N-Channel Super Trench Power MOSFET

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NCE Power Semiconductor

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NCEP0225G N-Channel Super Trench Power MOSFET by NCE Power Semiconductor - Datasheet Preview — Datasheet preview – NCEP0225G

Datasheet Details

Part number	NCEP0225G
Manufacturer	NCE Power Semiconductor
File Size	382.47 KB
Description	N-Channel Super Trench Power MOSFET
Datasheet	NCEP0225G Datasheet
Additional preview pages of the NCEP0225G datasheet.

Product details

Description

The NCEP0225G uses Super Trench technology that is General

Features

uniquely optimized to provide the most efficient high.
VDS =200V,ID =25A frequency switching performance. Both conduction and RDS(ON)=33mΩ (typical) @ VGS=10V switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for.
Excellent gate charge x RDS(on) product(FOM) high-frequency switching and synchronous rectification.
Very low on-resistance RDS(on).

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Published: Jan 21, 2025 |