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NCEP02525F - N-Channel Super Trench Power MOSFET

Datasheet Summary

Description

The NCEP02525F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance.

Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg.

Features

  • VDS =250V,ID =25A RDS(ON)=60mΩ (typical) @ VGS=10V.
  • Excellent gate charge x RDS(on) product(FOM).
  • Very low on-resistance RDS(on).
  • 175 °C operating temperature.
  • Pb-free lead plating.
  • 100% UIS tested.

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Datasheet Details

Part number NCEP02525F
Manufacturer NCE Power Semiconductor
File Size 357.08 KB
Description N-Channel Super Trench Power MOSFET
Datasheet download datasheet NCEP02525F Datasheet
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http://www.ncepower.com NCEP02525F NCE N-Channel Super Trench Power MOSFET Description The NCEP02525F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification.
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