NCEP02525F Datasheet | NCE Power Semiconductor

Description The NCEP02525F uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =250V,ID =25A RDS(ON)=60mΩ (typical) @ VGS=10V - Excellent gate charge x RDS(on) product(FOM) - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - 100% UIS tested Application - LED backlighting - Ideal for high-frequency switching and synchronous rectification 100% UIS TESTED! Schematic diagram Marking and pin assignment TO-220F top view Package Marking and Ordering Information Device Marking Device Device Package TO-220F Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TA=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) ID (100℃) Pulsed Drain Current Maximum Power Dissipation Derating factor Single pulse avalanche energy (Note...