NCEP02590T Datasheet | NCE Power Semiconductor

Description The NCEP02590T uses Super Trench technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low bination of RDS(ON) and Qg. This device is ideal for high-frequency switching and synchronous rectification. General Features - VDS =250V,ID =90A RDS(ON) <15mΩ @ VGS=10V - Excellent gate charge x RDS(on) product - Very low on-resistance RDS(on) - 175 °C operating temperature - Pb-free lead plating - Optimized body diode reverse recovery performance Application - DC/DC Converter - Ideal for high-frequency switching and synchronous rectification Schematic diagram TO-247 top view 100% UIS TESTED! 100% ∆Vds TESTED! Package Marking and Ordering Information Device Marking Device Device Package TO-247-3L Reel Size - Tape width - Quantity - Absolute Maximum Ratings (TC=25℃unless otherwise noted) Parameter Symbol Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous Drain Current-Continuous(TC=100℃) Pulsed Drain Current (Note 1) Maximum Power Dissipation ID (100℃) IDM PD Derating factor Single pulse avalanche energy (Note 5) Operating Junction and Storage Temperature Range TJ,TSTG Limit...