NEC 2SD2165
The 2SD2165 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor.| Part No. | 2SD2165 |
|---|---|
| Datasheet | 2SD2165 Download |
| Manufacturer |  NEC |
| Description | NPN SILICON EPITAXIAL TRANSISTOR |
| Buy | Stock & Price |
FEATURES
● High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 1.0 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 3.0 A, IB = 30 mA)● Mold package that does not require an insulating board or insulation bushing
ABSOLUTE MAXIMUM RATINGS
(TA = 25°C) Parameter Symbol Ratings Unit Collector to base voltage VCBO 100 V Collector to emitter voltage VCEO 100 V Emitter to base voltage VEBO 7.0 V Collector current (DC) Collector current (pulse) IC(DC) 6.0 A IC(pulse) 10Note A Base current (DC) IB(DC) 1.0 A Total power dissipation (TC = 25°C) PT 30 W Total power dissipation (TA = 25°C) PT 2.0 W Junction temperature Tj 150 °C Storage temperature Tstg −55 to +150 °C Note PW ≤ 300 µs, duty cycle ≤ 10% PACKAGE DRAWING (UNIT: mm) 10.0 ±0.3 φ 3.2 ±0.2 4.5 ±0.2 2.7 ±0.2 3 ±0.1 12.0 ±0.2 15.0 ±0.3 4 ±0.2 13.5 MIN. 0.7 ±0.1 2.54 TYP. 1.3 ±0.2 2.5 ±0.1 1.5 ±0.2 0.65 ±0.1 2.54 TYP. 1 23 Electrode Connection 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version.
