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2SD2164 - NPN Silicon Epitaxial Transistor

General Description

of circuits, software and other related information in this document are provided for illustrative purposes in semiconductor product operation and application examples.

Key Features

  • a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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DATA SHEET SILICON POWER TRANSISTOR 2SD2164 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SD2164 is a single power transistor developed especially for high hFE. This transistor is ideal for simplifying drive circuits and reducing power dissipation because its hFE is as high as that of Darlington transistors, but it is a single transistor. In addition, this transistor features a small resin insulated package, thus contributing to high-density mounting and mounting cost reduction. PACKAGE DRAWING (UNIT: mm) FEATURES • High hFE and low VCE(sat): hFE ≅ 1,300 TYP. (VCE = 5.0 V, IC = 0.5 A) VCE(SAT) ≅ 0.3 V TYP. (IC = 2.