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2SK2359 - N-Channel MOSFET

Datasheet Summary

Description

10.6 MAX.

5.9 MIN.

12.7 MIN.

Features

  • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) 4 1 2 3 6.0 MAX.
  • Low Ciss Ciss = 1050 pF TYP.
  • High Avalanche Capability Ratings.

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Datasheet preview – 2SK2359

Datasheet Details

Part number 2SK2359
Manufacturer NEC
File Size 122.21 KB
Description N-Channel MOSFET
Datasheet download datasheet 2SK2359 Datasheet
Additional preview pages of the 2SK2359 datasheet.

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Full PDF Text Transcription

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DATA SHEET MOS FIELD EFFECT TRANSISTORS 2SK2359/2SK2360 SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK2359, 2SK2359-Z/2SK2360, 2SK2360-Z is N-Channel MOS Field Effect Transistor designed for high voltage switching 3.0 ± 0.3 PACKAGE DIMENSIONS (in millimeters) 10.6 MAX. 3.6 ± 0.2 10.0 5.9 MIN. 12.7 MIN. 15.5 MAX. applications. 4.8 MAX. 1.3 ± 0.2 FEATURES • Low On-Resistance 2SK2359: RDS(on) = 0.9 Ω (VGS = 10 V, ID = 4.0 A) 2SK2360: RDS(on) = 1.0 Ω (VGS = 10 V, ID = 4.0 A) 4 1 2 3 6.0 MAX. • Low Ciss Ciss = 1050 pF TYP.
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