2SK3357 Description
The 2SK3357 is N-channel MOS Field Effect Transistor designed for high current switching applications.
2SK3357 Key Features
- Super low on-state resistance: RDS(on)1 = 5.8 mΩ MAX. (VGS = 10 V, ID = 38 A) RDS(on)2 = 8.8 mΩ MAX. (VGS = 4.0 V, ID =
- Low Ciss: Ciss = 9800 pF TYP
- Built-in gate protection diode (TO-3P)