2SK3359
Overview
The 2SK3359 is N-Channel MOS Field Effect Transistor designed for high current switching applications.
- Low on-state resistance RDS(on)1 = 20 mΩ MAX. (VGS = 10 V, ID = 35 A) 5 5 RDS(on)2 = 28 mΩ MAX. (VGS = 4.5 V, ID = 30 A)
- Low Ciss: Ciss = 4900 pF TYP.
- Built-in gate protection diode (TO-220AB)
