NE58219 Datasheet | NEC

NEC's NPN SILICON EPITAXIAL TRANSISTOR 3 PINS ULTRA SUPER MINI MOLD Features - HIGH f T: 5 GHz TYP at VCE = 5 V , IC = 5 m A, f = 1 GHz - LOW Cre: 0.9 p F TYP at VCB = 5 V, IE = 0, f = 1 MHz 0.2 +0.1 - 0 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 19 - ULTRA SUPER MINI MOLD PACKAGE: 1.6 x 0.8 mm 1.6±0.1 0.8±0.1 2 1.6±0.1 1.0 0.5 DESCRIPTION NEC's NE58219 is a low supply voltage transistor designed for UHF Mixer and oscillator applications. The 3 pin ultra super mini mold package makes this device ideally suited for high density surface mount assembly. 0.75±0.05 PIN CONNECTIONS 1. Emitter 2. Base 3. Collector ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER EIAJ1 REGISTERED NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO VCE(sat) h FE f T CRE |S21E|2 Notes: 1. Electronic Industrial Association of Japan 2. Pulsed measurement, pulse width ≤ 350 µs, Duty Cycle ≤ 2 %. 3. The emitter terminal and the case shall be connected to the guard terminal of the three-terminal capacitance bridge. PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 15 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 Collector Saturation Voltage at h FE = 10, IC = 5 m A DC Current Gain at VCE = 5 V, IC = 5 m A2 Gain Bandwidth at VCE = 5 V, IC = 5 m A Feedback Capacitance at VCB = 5 V, IE = 0, f = 1 MHz3 Insertion Power Gain at VCE = 5 V, IC = 5 m A, f = 1 GHz GHz p F d B 5.0 UNITS µA µA V 60 3.0 5.0 0.9 1.2 MIN NE58219 2SC5004 19 TYP MAX 0.1 0.1 0.5 120 California Eastern Laboratories 0 to 0.1 0.15 +0.1 - 0.05 0.3 +0.1 -...