NE681
FEATURES
- HIGH GAIN BANDWIDTH PRODUCT: f T = 8 GHz
- LOW NOISE FIGURE: 1.2 d B at 1 GHz 1.6 d B at 2 GHz
NE681 SERIES
- HIGH ASSOCIATED GAIN: 15 d B at 1 GHz 12 d B at 2 GHz
- LOW COST rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL l a r e t o o n f a f DESCRIPTION r d e e o s f c i Th i h f d t e of d m s n o e le fr m a s m l o l c a e c r e s a Ple ils: a t e 5 d 3 1 8 6 E N
00 (CHIP) 35 (MICRO-X)
NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681's unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain.
18 (SOT 343 STYLE)
19 (3 PIN ULTRA SUPER MINI MOLD)
NOISE FIGURE, GAIN MSG AND MAG vs....
