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NE681 - NECs NPN SILICON HIGH FREQUENCY TRANSISTOR

General Description

NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications.

Key Features

  • HIGH GAIN.

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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NEC's NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz • LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz NE681 SERIES • HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz • LOW COST rs e b m : u E n ot T t n O r . e a N r n p a g E i g t S s n e A i e e E d w h o s l w PL l a r e t o o n f a f DESCRIPTION r d e e o s f c i Th i h f d t e of d m s n o e le fr m a s m l o l c a e c r e s a Ple ils: a t e 5 d 3 1 8 6 E N E B 00 (CHIP) 35 (MICRO-X) NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz.