NE681 Description
r d e e o s f c i Th i h f d t e of d m s n o e le fr m a s m l o l c a e c r e s a Ple ils: a t e 5 d 3 1 8 6 E N E B 00 (CHIP) 35 (MICRO-X) NEC's NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz.
NE681 Key Features
- HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz
- LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz
- HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz
- LOW COST