NE686
FEATURES
- HIGH GAIN BANDWIDTH PRODUCT: f T of 15 GHz
- LOW VOLTAGE/LOW CURRENT OPERATION
- HIGH INSERTION POWER GAIN: |S21E|2 = 12 d B @ 2 V, 7 m A, 2 GHz |S21E|2 = 11 d B @ 1 V, 5 m A, 2 GHz
- LOW NOISE: 1.5 d B AT 2.0 GHz
- AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES
18 (SOT 343 STYLE)
NE686 SERIES
19 (3 PIN ULTRA SUPER MINI MOLD) rs e b m : u E n ot T t n O r . e a N r n p a g E i S s ng heet A i e E d w L w P llo as r e t o o n f a f r d e e Th his ded fo offic t m o es en r l f ELECTRICAL CHARACTERISTICS m a s m l o l c a c re e s a Ple ils: a d e t 8 6 30 NE6 8633 N E6 8 6 3 9 NE6 8639R NE6
DESCRIPTION
The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications. NE686's high f T make it an excellent choice for portable wireless applications up to 5 GHz. The NE686 die is available in six different low cost plastic surface mount package styles.
30 (SOT 323 STYLE) 33 (SOT 23 STYLE) 39 (SOT 143...
