NE69039 Datasheet | NEC

.. PRELIMINARY DATA SHEET NPN SILICON EPITAXIAL TRANSISTOR Features - OUTPUT POWER AT 1d B PRESSION POINT: 27.5 d Bm TYP @F = 1.9 GHZ, VCE = 3.6 V, Class AB, Duty 1/8 - 4 PIN MINI MOLD PACKAGE: NE69039 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE 39 +0.2 2.8 -0.3 +0.2 1.5 -0.1 +0.10 0.4 -0.05 (LEADS 2, 3, 4) 2.9 ± 0.2 0.95 0.85 3 1.9 DESCRIPTION The NE69039 is a low voltage, NPN Silicon Bipolar Transistor for pulsed power applications. The device is designed to operate from a 3.6 V supply, and deliver over 1/2 watt of power output at frequencies up to 2.0 GHZ with a 1:8 duty cycle. These characteristics make it an ideal device for TX output stage in a 1.9 GHZ digital cordless telephone (DECT or PHS). The part is supplied in a SOT-143 (SC-61) 4-pin Mini-mold package and is available on tape and reel. The NE69039 transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. +0.2 1.1 -0.1 +0.10 0.6 -0.05 1) Collector 2) Emitter 3) Base 4) Emitter 0.16 +0.10 -0.06 5˚ 0 to 0.1 5˚ ELECTRICAL CHARACTERISTICS (TA = 25 °C) PART NUMBER PACKAGE CODE SYMBOLS ICBO IEBO h FE P-1 GP PARAMETERS Collector Cutoff Current, VCB = 5 V, IE = 0 Emitter Cutoff Current, VEB = 1 V, IC = 0 DC Current Gain, VCE = 3.6 V, IC = 100 m A Output Power Power Gain Collector Efficiency VCE = 3.6 V, f = 1.9 GHZ ICq = 1 m A (Class AB) Duty 1/8 d Bm d B % MS 5.0 50 UNITS µA µA 30 27.5 6.0 72 10.0 MIN NE69039 39 TYP MAX 2.5 2.5 ηC Maximum Device On Time California Eastern...