NE699M01 Datasheet | NEC

.. PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION Features - - - - - HIGH f T: 16 GHz TYP at 2 V, 20 m A LOW NOISE FIGURE: NF = 1.1 d B TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 d B TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 0.65 2.0 ± 0.2 1.3 2 1 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 6 0.2 (All Leads) 5 T97 DESCRIPTION The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 d B more gain pared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations. 0.9 ± 0.1 0.7 0.15 - 0.05 0 ~ 0.1 +0.10 PIN CONNECTIONS 1. Emitter 4. Emitter 2. Emitter 5. Emitter 3. Base 6. Collector Note: Pin 3 is identified with a circle on the bottom of the package. ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOLS ICBO IEBO h FE1 f T CRE2 |S21E| NF NE699M01 M01 UNITS µA µA 70 GHz p F d B d B 12 13 16 0.2 14 1.1 1.8 0.3 MIN TYP MAX 0.1 0.1 140 PARAMETERS AND CONDITIONS Collector Cutoff Current at VCB = 5 V, IE = 0 Emitter Cutoff Current at VEB = 1 V, IC = 0 DC Current Gain at VCE = 2 V, IC = 20 m A Gain Bandwidth Product at VCE = 2 V, IC = 20m A, f = 2.0GHz Feedback Capacitance at VCB = 2 V, IE = 0, f = 1 MHz Insertion Power Gain at VCE = 2 V, IC = 20 m A, f = 2.0 GHz Noise Figure at VCE = 2 V, IC = 3 m A, f = 2.0 GHz Notes: 1. Pulsed measurement, pulse width ≤ 350 µs, duty cycle ≤ 2 %. 2. The emitter terminal should be connected to the ground terminal of the 3 terminal capacitance bridge. California Eastern...