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NE699M01 Datasheet NPN Epitaxial Silicon Transistor

Manufacturer: NEC (now Renesas Electronics)

Overview: .. PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN.

General Description

The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package.

Its four emitter pins decrease emitter inductance resulting in 3 dB more gain pared to conventional SOT-23 and SOT-143 devices.

The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.

Key Features

  • HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD.

More Datasheets from NEC (now Renesas Electronics)

Part Number Description
NE69039 NPN SILICON EPITAXIAL TRANSISTOR
NE698M01 NPN EPITAXIAL SILICON TRANSISTOR
NE6500379 3W L / S-BAND POWER GaAs MESFET
NE6500379A 3W L / S-BAND POWER GaAs MESFET
NE6500496 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE6501077 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE650R279A 0.2 W L / S-BAND POWER GaAs MES FET
NE650R479A 0.4 W L / S-BAND POWER GaAs MES FET
NE6510179 1 W L-BAND POWER GaAs HJ-FET
NE6510179A 1 W L-BAND POWER GaAs HJ-FET

NE699M01 Distributor