NE699M01 datasheet by NEC (now Renesas Electronics).
| Part number | NE699M01 |
|---|---|
| Datasheet | NE699M01_NEC.pdf |
| File Size | 68.65 KB |
| Manufacturer | NEC (now Renesas Electronics) |
| Description | NPN EPITAXIAL SILICON TRANSISTOR |
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The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain pared to conventional SOT-23 and SOT-143 devices. The NE699M01 is ideal for LNA and pre-driver applications up to 2.4 GHz where low cost, high gain, low voltage and low current are prime considerations.
View all NEC (now Renesas Electronics) datasheets
| Part Number | Description |
|---|---|
| NE69039 | NPN SILICON EPITAXIAL TRANSISTOR |
| NE698M01 | NPN EPITAXIAL SILICON TRANSISTOR |
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| NE6501077 | 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET |
| NE650R279A | 0.2 W L / S-BAND POWER GaAs MES FET |
| NE650R479A | 0.4 W L / S-BAND POWER GaAs MES FET |
| NE6510179 | 1 W L-BAND POWER GaAs HJ-FET |
| NE6510179A | 1 W L-BAND POWER GaAs HJ-FET |
