Datasheet4U Logo Datasheet4U.com

NE699M01 - NPN EPITAXIAL SILICON TRANSISTOR

Description

The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package.

Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices.

Features

  • HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD.

📥 Download Datasheet

Datasheet preview – NE699M01

Datasheet Details

Part number NE699M01
Manufacturer NEC
File Size 68.65 KB
Description NPN EPITAXIAL SILICON TRANSISTOR
Datasheet download datasheet NE699M01 Datasheet
Additional preview pages of the NE699M01 datasheet.

📁 Similar Datasheet

  • NE696M01 - NPN SILICON HIGH FREQUENCY TRANSISTOR (CEL)
  • NE600 - 1GHz LNA and mixer (NXP Semiconductors)
  • NE602 - NE602 (ETC)
  • NE602 - Double-Balanced Mixer and Oscillator (Philips)
  • NE602A - Double-Balanced Mixer and Oscillator (Philips)
  • NE604A - High Performance Low Power FM IF System (Philips)
  • NE605 - HIGH PERFORMANCE LOW POWER MIXER FM IF SYSTEM (NXP)
  • NE612 - Double-balanced mixer and oscillator (Philipss)
  • NE614A - Low Power FM IF System (NXP)
  • NE615 - SA615 (Philips)
Other Datasheets by NEC
  • NE69039 - NPN SILICON EPITAXIAL TRANSISTOR
  • NE698M01 - NPN EPITAXIAL SILICON TRANSISTOR
  • NE6500379 - 3W L / S-BAND POWER GaAs MESFET
  • NE6500379A - 3W L / S-BAND POWER GaAs MESFET
  • NE6500496 - 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
  • NE6501077 - 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
  • NE650R279A - 0.2 W L / S-BAND POWER GaAs MES FET
  • NE650R479A - 0.4 W L / S-BAND POWER GaAs MES FET

Full PDF Text Transcription

Click to expand full text
www.DataSheet4U.com PRELIMINARY DATA SHEET NPN EPITAXIAL SILICON TRANSISTOR FOR MICROWAVE HIGH-GAIN AMPLIFICATION FEATURES • • • • • HIGH fT: 16 GHz TYP at 2 V, 20 mA LOW NOISE FIGURE: NF = 1.1 dB TYP at 2 GHz HIGH GAIN: |S21E|2 = 14 dB TYP at f = 2 GHz 6 PIN SMALL MINI MOLD PACKAGE EXCELLENT LOW VOLTAGE, LOW CURRENT PERFORMANCE 0.65 2.0 ± 0.2 1.3 2 1 NE699M01 OUTLINE DIMENSIONS (Units in mm) PACKAGE OUTLINE M01 TOP VIEW 2.1 ± 0.1 1.25 ± 0.1 6 0.2 (All Leads) 5 T97 3 4 DESCRIPTION The NE699M01 is an NPN high frequency silicon epitaxial transistor (NE687) encapsulated in an ultra small 6 pin SOT363 package. Its four emitter pins decrease emitter inductance resulting in 3 dB more gain compared to conventional SOT-23 and SOT-143 devices.
Published: |