Datasheet4U Logo Datasheet4U.com

NE6500379 - 3W L / S-BAND POWER GaAs MESFET

General Description

The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems.

It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion.

Key Features

  • High Output Power.
  • High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ.
  • High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz.

📥 Download Datasheet

📁 Similar Datasheet

Part Number Description Manufacturer
NE6500496 L&S BAND MEDIUM POWER GaAs MESFET California Eastern
NE650 Dolby B-Type Noise Reduction Circuit Philips
NE650103M NECS 10 W L & S-BAND POWER GaAs MESFET ETC
NE6510179A MEDIUM POWER GaAs HJ-FET CEL
NE600 1GHz LNA and mixer NXP Semiconductors

Other Datasheets by NEC (now Renesas Electronics)

Part Number Description
NE6500379A 3W L / S-BAND POWER GaAs MESFET
NE6500496 4 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE6501077 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET
NE650R279A 0.2 W L / S-BAND POWER GaAs MES FET
NE650R479A 0.4 W L / S-BAND POWER GaAs MES FET

Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

View original datasheet text
DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power • High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ. • High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.