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NE6500379A - 3W L / S-BAND POWER GaAs MESFET

General Description

The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems.

It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion.

Key Features

  • High Output Power.
  • High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ.
  • High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.9 GHz.

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Full PDF Text Transcription (Reference)

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DATA SHEET N-CHANNEL GaAs MES FET NE6500379A 3W L, S-BAND POWER GaAs MESFET DESCRIPTION The NE6500379A is a 3W GaAs MESFET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 3 watt of output power (CW) with high linear gain, high efficiency and excellent distortion. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power • High Linear Gain : Po (1dB) = +35 dBm typ. : 10 dB typ. • High Power Added Efficiency: 50% typ. @VDS = 6 V, IDset = 500 mA, f = 1.