NE650R279A
NE650R279A is 0.2 W L / S-BAND POWER GaAs MES FET manufactured by NEC.
PRELIMINARY DATA SHEET
N-CHANNEL GaAs MES FET
0.2 W L, S-BAND POWER GaAs MES FET
DESCRIPTION
The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile munication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures.
Features
- High Output Power
- High Linear Gain : PO (1 dB) = +23 dBm typ. : 16 dB typ.
- High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f...
