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NE650R279A

Manufacturer: NEC (now Renesas Electronics)
NE650R279A datasheet preview

Datasheet Details

Part number NE650R279A
Datasheet NE650R279A_NEC.pdf
File Size 77.98 KB
Manufacturer NEC (now Renesas Electronics)
Description 0.2 W L / S-BAND POWER GaAs MES FET
NE650R279A page 2 NE650R279A page 3

NE650R279A Overview

The NE650R279A is a 0.2 W GaAs MES FET designed for middle power transmitter applications for mobile munication handset and base station systems. It is capable of delivering 0.2 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control...

NE650R279A Key Features

  • High Output Power
  • High Linear Gain : PO (1 dB) = +23 dBm typ. : 16 dB typ
  • High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 50 mA, f = 1.9 GHz
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NE650R279A Distributor

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