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NE650R479A - 0.4 W L / S-BAND POWER GaAs MES FET

General Description

The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems.

Key Features

  • High Output Power.
  • High Linear Gain : PO (1 dB) = +26 dBm typ. : 14 dB typ.
  • High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz.

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Other Datasheets by NEC (now Renesas Electronics)

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Full PDF Text Transcription (Reference)

The following content is an automatically extracted verbatim text from the original manufacturer datasheet and is provided for reference purposes only.

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PRELIMINARY DATA SHEET N-CHANNEL GaAs MES FET NE650R479A 0.4 W L, S-BAND POWER GaAs MES FET DESCRIPTION The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile communication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control procedures. FEATURES • High Output Power • High Linear Gain : PO (1 dB) = +26 dBm typ. : 14 dB typ. • High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.