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NE650R479A

Manufacturer: NEC (now Renesas Electronics)
NE650R479A datasheet preview

Datasheet Details

Part number NE650R479A
Datasheet NE650R479A_NEC.pdf
File Size 79.45 KB
Manufacturer NEC (now Renesas Electronics)
Description 0.4 W L / S-BAND POWER GaAs MES FET
NE650R479A page 2 NE650R479A page 3

NE650R479A Overview

The NE650R479A is a 0.4 W GaAs MES FET designed for middle power transmitter applications for mobile munication handset and base station systems. It is capable of delivering 0.4 watt of output power (CW) with high linear gain, high efficiency, excellent distortion and is suitable as a driver amplifier for our NE6500379A etc. Reliability and performance uniformity are assured by NEC’s stringent quality and control...

NE650R479A Key Features

  • High Output Power
  • High Linear Gain : PO (1 dB) = +26 dBm typ. : 14 dB typ
  • High Power Added Efficiency: 45% typ. @VDS = 6 V, IDset = 100 mA, f = 1.9 GHz
NEC (now Renesas Electronics) logo - Manufacturer

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NE6510179 1 W L-BAND POWER GaAs HJ-FET
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NE6510379A 3 W L-BAND POWER GaAs HJ-FET
NE651R479A 0.4 W L-BAND POWER GaAs HJ-FET
NE661M04 NPN SILICON RF TRANSISTOR FOR LOW CURRENT / LOW NOISE / HIGH-GAIN AMPLIFICATION FLAT-LEAD 4-PIN THIN SUPER MINI-MOLD

NE650R479A Distributor

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