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NE6501077 - 10 W L / S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET

General Description

The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band.

To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure.

Key Features

  • Class A operation.
  • High output power: 39.5 dBm (typ).
  • High gain: 10.5 dB (typ).
  • High power added efficiency: 40 % (typ).
  • Hermetically sealed ceramic package 2.26 ±0.4 0.2 MAX. 1.0 0.1.
  • 0.02 +0.06 2.5 R1.25, 2 PLACES DRAIN 8.9 ±0.4 6.35 ±0.4 4.0 MIN BOTH LEADS 3.8 MAX.

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Full PDF Text Transcription (Reference)

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PRELIMINARY DATA SHEET GaAs MES FET NE6501077 10 W L, S-BAND POWER GaAs FET N-CHANNEL GaAs MES FET DESCRIPTION The NE6501077 is power GaAs FET which provides high gain, high efficiency and high output power in L, S band. To reduce thermal resistance, the device has a PHS (Plated Heat Sink) structure. PACKAGE DIMENSIONS (UNIT: mm) 17.5 ±0.5 14.3 1.0 ±0.1 GATE SOURCE FEATURES • Class A operation • High output power: 39.5 dBm (typ) • High gain: 10.5 dB (typ) • High power added efficiency: 40 % (typ) • Hermetically sealed ceramic package 2.26 ±0.4 0.2 MAX. 1.0 0.1–0.02 +0.06 2.5 R1.25, 2 PLACES DRAIN 8.9 ±0.4 6.35 ±0.4 4.0 MIN BOTH LEADS 3.8 MAX.