NESG2046M33 - NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION

NEC (now Renesas Electronics)

Key Features

IDEAL FOR LOW NOISE, HIGH-GAIN.

NESG2046M33 necs npn sige transistor for low noise / high -gain amplification by NEC (now Renesas Electronics) - Datasheet Preview

Datasheet Details

Part number	NESG2046M33
Manufacturer	NEC (now Renesas Electronics)
File Size	118.31 KB
Description	NECs NPN SiGe TRANSISTOR FOR LOW NOISE / HIGH -GAIN AMPLIFICATION
Datasheet	NESG2046M33 Datasheet

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Full PDF Text Transcription (Reference)

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PRELIMINARY DATA SHEET NEC's NPN SiGe TRANSISTOR NESG2046M33 FOR LOW NOISE, HIGH -GAIN AMPLIFICATION FEATURES • • IDEAL FOR LOW NOISE, HIGH-GAIN AMPLIFICATION APPLICATIONS: NF = 0.8 dB TYP., Ga = 11.5 dB TYP. @ VCE = 1 V, IC = 3 mA, f = 2 GHz HIGH BREAKDOWN VOLTAGE TECHNOLOGY FOR SIGE TRANSISTORS : VCEO (absolute maximum ratings) = 5.0 V • 3-PIN SUPER LEAD-LESS MINIMOLD (M33) PACKAGE ORDERING INFORMATION PART NUMBER NESG2046M33-A NESG2046M33-T3-A QUANTITY 50 pcs (Non reel) 10 kpcs/reel SUPPLYING FORM • 8 mm wide embossed taping • Pin 2 (Base) face the perforation side of the tape Remark To order evaluation samples, contact your nearby sales ofﬁce. The unit sample quantity is 50 pcs.